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| DC COMPONENTS CO., LTD. R MJE13007 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58) .625(15.87) .570(14.48) .350(8.90) .330(8.38) 123 .640 Typ (16.25) Absolute Maximum Ratings(TA=25 Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o o C) Rating 700 400 9 8 4 80 +150 -55 to +150 Unit V V V A A W o o Symbol VCEX VCEO VEBO IC IB PD TJ TSTG .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCEX BVCEO ICEX IEBO VCE(sat)1 (1) Min 700 400 - Typ - Max 0.1 0.1 1 2 3 1.2 1.6 40 30 Unit V V mA mA V V V V V - Test Conditions IC=1mA, VBE(off)=1.5V IC=10mA VCE=700V, VBE(off)=1.5V VEB=9V IC=2A, IB=400mA IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=400mA IC=5A, IB=1A IC=2A, VCE=5V IC=5A, VCE=5V Collector-Emitter Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 hFE1 Base-Emitter Saturation Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width (1) - - 10 10 - hFE2 380s, Duty Cycle 2% |
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